SAMSUNG 990 Pro with Heatsink 4TB NVMe 2.0 M.2 2280 Internal SSD, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC, Black

3.029,00 AED

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4TB Storage Capacity
M.2 2280 Form Factor
PCIe 4.0 x4 / NVMe 2.0 Interface
Sequential Reads up to 7450 MB/s
Sequential Writes up to 6900 MB/s
Up to 2400TB TBW (Total Bytes Written)
PlayStation 5 Compatible Heatsink
Samsung V-NAND Flash Technology
AES 256-Bit Encryption

Read Speed Maximum: 7,450 MB/s
Random: 1,600,000 IOPS (4 kB Files)
Write Speed Maximum: 6,900 MB/s
Random: 1,550,000 IOPS (4 kB Files)
Buffer No
SSD Specs
Flash Controller Samsung In-House
Flash Memory Type Multi-Level Cell (MLC)
SMART Support Yes
TRIM Support Yes
Reliability / Data Integrity
Encryption 256-Bit AES
Endurance (Total Bytes Written) 2400 TB
Electrical
Power Draw 6.5 W (Active)
5.8 mW (Standby)

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