Samsung 870 EVO 1TB 2.5 Inch SATA III Internal SSD, Up to 560 MB/s Seq Read & 530 MB/s Seq Write Speed, V-NAND Technology, 1GB LPDDR4 Cache, MKX Controller, 1.5 M Hrs. MTBF, Black
899,00 AED
- 1TB Storage Capacity
- 2.5″ Form Factor
- SATA III 6 Gb/s Interface
- 1GB LPDDR4 Cache
- Up to 560 MB/s Sequential Read Speed
- Up to 530 MB/s Sequential Write Speed
- Samsung MKX Controller
- MLC V-NAND Technology
- MTBF Rating: 1.5 Million Hours
- Endurance up to 600TB
| Interface | SATA 6 Gb/s, compatible with SATA 3 Gb/s & 1.5 Gb/s |
| Application | Client PCs |
| Capacity | 1,000 GB (actual usable may be less due to formatting/OS/etc.) |
| Form Factor | 2.5 inch |
| Dimensions (WxHxD) | 100 × 69.85 × 6.8 mm |
| Weight | Approx. 45 g |
| Storage Memory | Samsung V-NAND 3bit MLC |
| Controller | Samsung MKX Controller |
| Cache Memory | Samsung 1 GB Low Power DDR4 SDRAM |
| TRIM Support | Yes |
| S.M.A.R.T Support | Yes |
| Garbage Collection | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit (Class 0), TCG/Opal, IEEE1667 |
| WWN Support | Yes |
| Device Sleep Mode | Supported |
| Sequential Read | Up to 560 MB/s |
| Sequential Write | Up to 530 MB/s (with TurboWrite) |
| Random Read (4KB, QD32) | Up to 98,000 IOPS |
| Random Write (4KB, QD32) | Up to 88,000 IOPS |
| Random Read (4KB, QD1) | Up to 13,000 IOPS |
| Random Write (4KB, QD1) | Up to 36,000 IOPS |
| Average Power Consumption | 2.5 W (max 4 W burst) |
| Idle Power | Max 30 mW |
| Allowable Voltage | 5V ±5% |
| MTBF | 1.5 Million Hours |
| Operating Temperature | 0–70 ℃ |
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